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LAB
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
SEME
2N7224 IRFM150
N-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
* REPETITIVE AVALANCHE RATING * ISOLATED AND HERMETICALLY SEALED * ALTERNATIVE TO TO-3 PACKAGE
100V 34A W 0.070W
1
2
3
0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC
20.07 (0.790) 20.32 (0.800)
3.81 (0.150) BSC
* SIMPLE DRIVE REQUIREMENTS * EASE OF PARALLELING
TO-254AA - Package
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg RqJC RqJCS RqJCA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction-to-Ambient
2
20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 34A 21A 136A 150W 1.2W/C 150mJ 5.5V/ns -55 to 150C 0.83C/W 0.21C/W 48C/W
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 200mH , RG = 25W , Peak IL = 34A , Starting TJ = 25C 3) @ ISD 34A , di/dt 70A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
2/99
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
Parameter
BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage
SEME
2N7224 IRFM150
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDS ID =34A VDS = 0.5BVDS VDD = 50V ID = 34A RG = 2.35W ID = 34A ID = 21A ID = 34A ID = 250mA IDS = 21A VDS = 0.8BVDSS TJ = 125C ID = 1mA
Min.
100
Typ.
Max.
Unit
V
DBVDSS Temperature Coefficient of DTJ Breakdown Voltage
RDS(on) Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Pulse Source Current
2
Reference to 25C
0.13 0.070 0.081 2 9 25 250 100 -100 3700 1100 200 50 8 15 125 22 65 35 190 170 130 34 136 4
V / C
W
V S(W )W(
2/99
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS
mA
nA
pF
nC nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS A V ns
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
IS = 34A VGS = 0 IF = 34A
TJ = 25C TJ = 25C Negligible 8.7 8.7
1.8 500 2.9
di / dt 100A/ms VDD 50V
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)
nH
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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